IRLML2246
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 135.0mΩ
- Qg(Typ): 2.9nC
- Rth(JC): 100 (JA)K/W
IRF9520NS
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 480.0mΩ
- Qg(Typ): 18.0nC
- Rth(JC): 3.1K/W
- Power Dissipation@TC 25C: 3.8W
- Id@TC 25C: -6.8A
IRFU5305
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 65mΩ
- Qg(Typ): 42nC
- Rth(JC): 1.4K/W
- Power Dissipation@TC 25C: 89W
- Id@TC 25C: -18A
IRF9317

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 6.6m?
- RDS(on) Max@4.5V: 10.2mΩ
- Qg(Typ): 31.0nC
- Rth(JC): 50 (JA)K/W
MMBF5462

电气特性 Features
Configuration: | Single |
Channel Type: | P |
Maximum Gate Source Voltage: | 40 V |
Maximum Drain Gate Voltage: | -40 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
IRLML5203TRPBF-1
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 98.0mΩ
- RDS(on) Max@4.5V: 165.0mΩ
- Qg(Typ): 9.5nC
- Rth(JC): 100 (JA)K/W
IRFP9140N
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 117.0mΩ
- Qg(Typ): 64.7nC
- Rth(JC): 1.3K/W
- Power Dissipation@TC 25C: 120W
- Id@TC 25C: -21A
IRF6218S
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -150V
- Vgs: 20V
- RDS(on) Max@10V: 150.0mΩ
- Qg(Typ): 21.0nC
- Rth(JC): 0.61K/W
- Power Dissipation@TC 25C: 250W
- Id@TC 25C: -27A
IRLML6401
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -12V
- Vgs: 8V
- RDS(on) Max@4.5V: 50.0mΩ
- Qg(Typ): 10.0nC
- Rth(JC): 100 (JA)K/W
IRFU5505
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 110.0mΩ
- Qg(Typ): 21.3nC
- Rth(JC): 2.2K/W
- Power Dissipation@TC 25C: 57W
- Id@TC 25C: -18A
J176_D74Z

电气特性 Features
Configuration: | Single |
Channel Type: | P |
Maximum Gate Source Voltage: | 30 V |
Maximum Drain Gate Voltage: | -30 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Through Hole |
Rad Hard: | No |
IRF5305S
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 60.0mΩ
- Qg(Typ): 42.0nC
- Rth(JC): 1.4K/W
- Power Dissipation@TC 25C: 110W
- Id@TC 25C: -31A
IRLML9303
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 165.0mΩ
- RDS(on) Max@4.5V: 270.0mΩ
- Qg(Typ): 2.0nC
- Rth(JC): 100 (JA)K/W
IRF7524D1
电气特性 Features
- 集成肖特基二极管的P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 270.0mΩ
- Qg(Typ): 5.4nC
- Rth(JC): 100 (JA)K/W
IRF4905S
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 20.0mΩ
- Qg(Typ): 120.0nC
- Rth(JC): 0.75K/W
- Power Dissipation@TC 25C: 170W
- Id@TC 25C: -74A