IRLML5103

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 600.0mΩ
  • RDS(on) Max@4.5V: 1000.0mΩ
  • Qg(Typ): 3.4nC
  • Rth(JC): 230 (JA)K/W

IRF4905L

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -55V
  • Vgs: 20V
  • RDS(on) Max@10V: 20.0mΩ
  • Qg(Typ): 120.0nC
  • Rth(JC): 0.75K/W
  • Power Dissipation@TC 25C: 200W
  • Id@TC 25C: -74A

IRFU5410

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 205mΩ
  • Qg(Typ): 38.7nC
  • Rth(JC): 1.9K/W
  • Power Dissipation@TC 25C: 66W
  • Id@TC 25C: -8.2A

IRLML9301

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 64.0mΩ
  • RDS(on) Max@4.5V: 103.0mΩ
  • Qg(Typ): 4.8nC
  • Rth(JC): 100 (JA)K/W

IRF7205

IRF7205

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 70.0m?
  • RDS(on) Max@4.5V: 130.0mΩ
  • Qg(Typ): 27.0nC
  • Rth(JC): 50 (JA)K/W

IRF9540NS

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 117.0mΩ
  • Qg(Typ): 64.7nC
  • Rth(JC): 1.1K/W
  • Power Dissipation@TC 25C: 3.8W
  • Id@TC 25C: -23A

IRF6218S

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -150V
  • Vgs: 20V
  • RDS(on) Max@10V: 150.0mΩ
  • Qg(Typ): 21.0nC
  • Rth(JC): 0.61K/W
  • Power Dissipation@TC 25C: 250W
  • Id@TC 25C: -27A

IRFHM9331

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 25V
  • RDS(on) Max@10V: 14.6mΩ
  • Qg(Typ): 16.0nC
  • Rth(JC): 6.0K/W
  • Id@TC 25C: -24A

IRF9540NL

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 117.0mΩ
  • Qg(Typ): 64.7nC
  • Rth(JC): 1.1K/W
  • Power Dissipation@TC 25C: 140W
  • Id@TC 25C: -23A

IRLMS5703

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 200.0mΩ
  • RDS(on) Max@4.5V: 400.0mΩ
  • Qg(Typ): 7.2nC
  • Rth(JC): 75 (JA)K/W

MMBF5461

MMBF5461

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:40 V
Maximum Drain Gate Voltage:-40 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

J177_D27Z

J177_D27Z

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No

IRFU5305

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -55V
  • Vgs: 20V
  • RDS(on) Max@10V: 65mΩ
  • Qg(Typ): 42nC
  • Rth(JC): 1.4K/W
  • Power Dissipation@TC 25C: 89W
  • Id@TC 25C: -18A

J175_D26Z

J175_D26Z

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No

IRLML5203

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 98.0m?
  • RDS(on) Max@4.5V: 165.0mΩ
  • Qg(Typ): 9.5nC
  • Rth(JC): 100 (JA)K/W