IRLML5103
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 600.0mΩ
- RDS(on) Max@4.5V: 1000.0mΩ
- Qg(Typ): 3.4nC
- Rth(JC): 230 (JA)K/W
IRF4905L
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 20.0mΩ
- Qg(Typ): 120.0nC
- Rth(JC): 0.75K/W
- Power Dissipation@TC 25C: 200W
- Id@TC 25C: -74A
IRFU5410
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 205mΩ
- Qg(Typ): 38.7nC
- Rth(JC): 1.9K/W
- Power Dissipation@TC 25C: 66W
- Id@TC 25C: -8.2A
IRLML9301
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 64.0mΩ
- RDS(on) Max@4.5V: 103.0mΩ
- Qg(Typ): 4.8nC
- Rth(JC): 100 (JA)K/W
IRF7205

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 70.0m?
- RDS(on) Max@4.5V: 130.0mΩ
- Qg(Typ): 27.0nC
- Rth(JC): 50 (JA)K/W
IRF9540NS
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 117.0mΩ
- Qg(Typ): 64.7nC
- Rth(JC): 1.1K/W
- Power Dissipation@TC 25C: 3.8W
- Id@TC 25C: -23A
IRF6218S
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -150V
- Vgs: 20V
- RDS(on) Max@10V: 150.0mΩ
- Qg(Typ): 21.0nC
- Rth(JC): 0.61K/W
- Power Dissipation@TC 25C: 250W
- Id@TC 25C: -27A
IRFHM9331
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 25V
- RDS(on) Max@10V: 14.6mΩ
- Qg(Typ): 16.0nC
- Rth(JC): 6.0K/W
- Id@TC 25C: -24A
IRF9540NL
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 117.0mΩ
- Qg(Typ): 64.7nC
- Rth(JC): 1.1K/W
- Power Dissipation@TC 25C: 140W
- Id@TC 25C: -23A
IRLMS5703
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 200.0mΩ
- RDS(on) Max@4.5V: 400.0mΩ
- Qg(Typ): 7.2nC
- Rth(JC): 75 (JA)K/W
MMBF5461

电气特性 Features
Configuration: | Single |
Channel Type: | P |
Maximum Gate Source Voltage: | 40 V |
Maximum Drain Gate Voltage: | -40 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
J177_D27Z

电气特性 Features
Configuration: | Single |
Channel Type: | P |
Maximum Gate Source Voltage: | 30 V |
Maximum Drain Gate Voltage: | -30 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Through Hole |
Rad Hard: | No |
IRFU5305
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 65mΩ
- Qg(Typ): 42nC
- Rth(JC): 1.4K/W
- Power Dissipation@TC 25C: 89W
- Id@TC 25C: -18A
J175_D26Z

电气特性 Features
Configuration: | Single |
Channel Type: | P |
Maximum Gate Source Voltage: | 30 V |
Maximum Drain Gate Voltage: | -30 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Through Hole |
Rad Hard: | No |
IRLML5203
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 98.0m?
- RDS(on) Max@4.5V: 165.0mΩ
- Qg(Typ): 9.5nC
- Rth(JC): 100 (JA)K/W