更新于 2025-11-06电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 25V
- RDS(on) Max@10V: 14.6mΩ
- RDS(on) Max@4.5V: 22.5mΩ
- Qg(Typ): 32.0nC
- Rth(JC): 3.8K/W
- Power Dissipation@TC 25C: 33W
- Id@TC 25C: -38A
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- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 8.2mΩ,Qg(Typ): 87.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 37.0m?,RDS(on) Max@4.5V: 65.0mΩ,Qg(Typ): 6.9nC,Rth(JC): 13K/W,Id@TC 25C: -13A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 6.6m?,RDS(on) Max@4.5V: 10.2mΩ,Qg(Typ): 31.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 60.0mΩ,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 200W,Id@TC 25C: -40A
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 70 mA |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |