更新于 2025-12-27电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 25V
- RDS(on) Max@10V: 14.6mΩ
- RDS(on) Max@4.5V: 22.5mΩ
- Qg(Typ): 32.0nC
- Rth(JC): 3.8K/W
- Power Dissipation@TC 25C: 33W
- Id@TC 25C: -38A
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