MMBFJ271

MMBFJ271

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

IRF9388

IRF9388

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 25V
  • RDS(on) Max@10V: 11.9mΩ
  • Qg(Typ): 18.0nC
  • Rth(JC): 50 (JA)K/W

IRLML6401

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -12V
  • Vgs: 8V
  • RDS(on) Max@4.5V: 50.0mΩ
  • Qg(Typ): 10.0nC
  • Rth(JC): 100 (JA)K/W

IRF9530NS

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 200.0mΩ
  • Qg(Typ): 38.7nC
  • Rth(JC): 1.9K/W
  • Power Dissipation@TC 25C: 3.8W
  • Id@TC 25C: -14A

IRF9540N

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 117.0mΩ
  • Qg(Typ): 64.7nC
  • Rth(JC): 1.1K/W
  • Power Dissipation@TC 25C: 140W
  • Id@TC 25C: -23A

MMBFJ177

MMBFJ177

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

IRF5210S

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 60.0mΩ
  • Qg(Typ): 120.0nC
  • Rth(JC): 0.75K/W
  • Power Dissipation@TC 25C: 170W
  • Id@TC 25C: -40A

PMBFJ175,215

PMBFJ175,215

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Drain Source Voltage:30 V
Maximum Continuous Drain Current:70 mA
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:30 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

IRF6217

IRF6217

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -150V
  • Vgs: 20V
  • RDS(on) Max@10V: 2400.0mΩ
  • Qg(Typ): 6.0nC
  • Rth(JC): 20K/W

IRF9540NS

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 117.0mΩ
  • Qg(Typ): 64.7nC
  • Rth(JC): 1.1K/W
  • Power Dissipation@TC 25C: 3.8W
  • Id@TC 25C: -23A

IRFR6215

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -150V
  • Vgs: 20V
  • RDS(on) Max@10V: 580.0mΩ
  • Qg(Typ): 44.0nC
  • Rth(JC): 1.4K/W
  • Power Dissipation@TC 25C: 110W
  • Id@TC 25C: 13A

IRF7416Q

IRF7416Q

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 20.0m?
  • RDS(on) Max@4.5V: 35.0mΩ
  • Qg(Typ): 61.0nC
  • Rth(JC): 50 (JA)K/W

IRLML5103

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 600.0mΩ
  • RDS(on) Max@4.5V: 1000.0mΩ
  • Qg(Typ): 3.4nC
  • Rth(JC): 230 (JA)K/W

IRF5305S

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -55V
  • Vgs: 20V
  • RDS(on) Max@10V: 60.0mΩ
  • Qg(Typ): 42.0nC
  • Rth(JC): 1.4K/W
  • Power Dissipation@TC 25C: 110W
  • Id@TC 25C: -31A

IRF5805

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 98.0mΩ
  • RDS(on) Max@4.5V: 165.0mΩ
  • Qg(Typ): 11.0nC
  • Rth(JC): 62.5 (JA)K/W