
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 12V
- RDS(on) Max@10V: 7.5mΩ
Configuration: | Single Dual Source |
Channel Type: | N |
Maximum Drain Source Voltage: | 5 V |
Maximum Continuous Drain Current: | 100 mA |
Maximum Gate Source Voltage: | 1 V |
Maximum Drain Gate Voltage: | -5 to 1 V |
Operating Temperature: | -65 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |