更新于 2025-03-06电气特性 Features
- P沟道功率MOS管
- Vbrdss: -150V
- Vgs: 20V
- RDS(on) Max@10V: 580mΩ
- Qg(Typ): 44nC
- Rth(JC): 1.4K/W
- Power Dissipation@TC 25C: 110W
- Id@TC 25C: -9A
相关文章
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 98.0mΩ,RDS(on) Max@4.5V: 165.0mΩ,Qg(Typ): 11.0nC,Rth(JC): 62.5 (JA)K/W
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 40.0mΩ,Qg(Typ): 33.3nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480.0mΩ,Qg(Typ): 18.0nC,Rth(JC): 3.1K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -6.8A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 65.0mΩ,Qg(Typ): 8.0nC,Rth(JC): 75 (JA)K/W
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |