FGH30T65UPDT_F155

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 650 V |
Maximum Continuous Collector Current: | 60 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IRG4PC40FD
电气特性 Features
- 高速(1-8kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 27A
- Vce(ON)@25℃(typ): 1.50V
FGA20S120M

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 40 A |
Maximum Gate Emitter Voltage: | ±25 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRGP4266D
电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 650V
- Ic@100℃: 90A
- Vce(ON)@25℃(typ): 1.70V
IRG4PH40UD2-E
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 21A
- Vce(ON)@25℃(typ): 2.43V
IRG4PSC71UDPBF
电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 85 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
SKB04N60E3045A

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 9.4 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Rad Hard: | No |
FGA20S125P

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1250 V |
Maximum Continuous Collector Current: | 40 A |
Maximum Gate Emitter Voltage: | ±25 V |
Mounting: | Through Hole |
Rad Hard: | No |
STGF10NB60SD

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 23 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
FGP10N60UNDF

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 20 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRGC4066B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.7V
NGTB15N120IHRWG

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200(Min) V |
Maximum Continuous Collector Current: | 30 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -40 to 175 ℃ |
Rad Hard: | No |
IGA30N60H3XKSA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 18 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
SGW15N120

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 30 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
NGTB40N120IHRWG

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -40 to 175 ℃ |
Rad Hard: | No |