首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 SGD02N120 SGD02N120 更新于 2025-07-08 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1200 VMaximum Continuous Collector Current:6.2 AMaximum Gate Emitter Voltage:±20 VMounting:Surface Mount