APT11GF120KRG

APT11GF120KRG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:25 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

IKD10N60RFATMA1

IKD10N60RFATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

HGTG11N120CND

HGTG11N120CND

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:43 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

SGW15N120

SGW15N120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

NGTB20N60L2TF1G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGC25B120KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 2.28V

FGA40T65SHDF

FGA40T65SHDF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IKW25T120

IKW25T120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG8CH50K10F

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.70V

IRG4PH50KPBF

IRG4PH50KPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:45 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

FGA25N120ANTDTU

FGA25N120ANTDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4IBC20KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 6.3A
  • Vce(ON)@25℃(typ): 2.27V

IKQ100N60TXKSA1

IKQ100N60TXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:160 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRG4PC40KPBF

IRG4PC40KPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:42 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4CC60UB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.7V