IGW40N120H3FKSA1

IGW40N120H3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IGP50N60T

IGP50N60T

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4PC40S

电气特性 Features

  • DC-1kHz(标准)IGBT模块
  • Vces: 600V
  • Ic@100℃: 31A
  • Vce(ON)@25℃(typ): 1.32V

NGTB40N60L2WG

NGTB40N60L2WG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRG4PC50FDPBF

IRG4PC50FDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGS30B60KPBF

IRGS30B60KPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:78 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRGB4059D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 4.0A
  • Vce(ON)@25℃(typ): 1.75V

IRGP4620D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 20A
  • Vce(ON)@25℃(typ): 1.55V

IRG7PH35U

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 35A
  • Vce(ON)@25℃(typ): 1.90V

FGAF40N60UFTU

FGAF40N60UFTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4BC30SPBF

IRG4BC30SPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:34 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IGW40N65F5FKSA1

IGW40N65F5FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:74 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRGR4607D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 7.0A
  • Vce(ON)@25℃(typ): 1.75V

IKW25N120T2

IKW25N120T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

AUIRGP4062D

AUIRGP4062D

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:48 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No