NGD18N40ACLBT4G

NGD18N40ACLBT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:430 V
Maximum Continuous Collector Current:15 A
Maximum Gate Emitter Voltage:18 V
Mounting:Surface Mount
Rad Hard:No

IRGR3B60KD2

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 4.2A
  • Vce(ON)@25℃(typ): 1.90V

IRG4BC30KD-SPBF

IRG4BC30KD-SPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:28 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IHD10N60RAATMA1

IHD10N60RAATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IKP06N60TXKSA1

IKP06N60TXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4650D

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 600V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.60V

IRGC14C40LD

电气特性 Features

  • DC-1kHz(标准)IGBT模块
  • Vces: 400V
  • Vce(ON)@25℃(typ): 1.55V

IGB50N60TATMA1

IGB50N60TATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IKA10N60TXKSA1

IKA10N60TXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:11.7 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP30B60KD-E

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 30A
  • Vce(ON)@25℃(typ): 1.95V

IGP06N60T

IGP06N60T

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4660D

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 600V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.60V

IRG4IBC30SPBF

IRG4IBC30SPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:23.5 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

HGTG7N60A4D

HGTG7N60A4D

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:34 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IGW25T120

IGW25T120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No