
电气特性 Features
- 绝缘栅双极型晶体管单管
- Trans IGBT Chip N-CH 600V 40A
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 50 A |
Maximum Gate Emitter Voltage: | ±25 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 500 V |
Maximum Continuous Collector Current: | 20 A |
Maximum Gate Emitter Voltage: | ±15 V |
Mounting: | Surface Mount |
Rad Hard: | No |