IRFR9024N
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 175.0mΩ
- Qg(Typ): 12.7nC
- Rth(JC): 3.3K/W
- Power Dissipation@TC 25C: 38W
- Id@TC 25C: 11A
IRLHS2242
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 31.0mΩ
- Qg(Typ): 12.0nC
- Rth(JC): 13K/W
- Power Dissipation@TC 25C: 9.6W
- Id@TC 25C: -15A
IRLML2246
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 135.0mΩ
- Qg(Typ): 2.9nC
- Rth(JC): 100 (JA)K/W
IRF7205PBF-1

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 70.0mΩ
- RDS(on) Max@4.5V: 130.0mΩ
- Qg(Typ): 27nC
- Rth(JC): 50 (JA)K/W
IRF4905L
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 20.0mΩ
- Qg(Typ): 120.0nC
- Rth(JC): 0.75K/W
- Power Dissipation@TC 25C: 200W
- Id@TC 25C: -74A
IRF7205

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 70.0m?
- RDS(on) Max@4.5V: 130.0mΩ
- Qg(Typ): 27.0nC
- Rth(JC): 50 (JA)K/W
IRFU5410
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 205mΩ
- Qg(Typ): 38.7nC
- Rth(JC): 1.9K/W
- Power Dissipation@TC 25C: 66W
- Id@TC 25C: -8.2A
J176_D74Z

电气特性 Features
Configuration: | Single |
Channel Type: | P |
Maximum Gate Source Voltage: | 30 V |
Maximum Drain Gate Voltage: | -30 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Through Hole |
Rad Hard: | No |
IRLU9343
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 105mΩ
- RDS(on) Max@4.5V: 170mΩ
- Qg(Typ): 31nC
- Rth(JC): 1.9K/W
- Power Dissipation@TC 25C: 79W
- Id@TC 25C: -14A
IRLML2244
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 54.0mΩ
- Qg(Typ): 6.9nC
- Rth(JC): 100 (JA)K/W
IRF5210L
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 60.0mΩ
- Qg(Typ): 120.0nC
- Rth(JC): 0.75K/W
- Power Dissipation@TC 25C: 200W
- Id@TC 25C: -40A
IRLML9301
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 64.0mΩ
- RDS(on) Max@4.5V: 103.0mΩ
- Qg(Typ): 4.8nC
- Rth(JC): 100 (JA)K/W
IRF9540N
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 117.0mΩ
- Qg(Typ): 64.7nC
- Rth(JC): 1.1K/W
- Power Dissipation@TC 25C: 140W
- Id@TC 25C: -23A
MMBFJ177

电气特性 Features
Configuration: | Single |
Channel Type: | P |
Maximum Gate Source Voltage: | 30 V |
Maximum Drain Gate Voltage: | -30 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
IRF7342D2

电气特性 Features
- 集成肖特基二极管的P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 105.0mΩ
- RDS(on) Max@4.5V: 170.0mΩ
- Qg(Typ): 26.0nC
- Rth(JC): 62.5 (JA)K/W