更新于 2025-07-07
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 17.5m?
- RDS(on) Max@4.5V: 28.1mΩ
- Qg(Typ): 14.0nC
- Rth(JC): 50 (JA)K/W
IRF9332
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- P沟道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 17.5mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -12V,Vgs: 8V,RDS(on) Max@4.5V: 7.0mΩ,Qg(Typ): 91.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 98.0mΩ,RDS(on) Max@4.5V: 165.0mΩ,Qg(Typ): 11.0nC,Rth(JC): 62.5 (JA)K/W
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 40.0mΩ,Qg(Typ): 33.3nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 150.0mΩ,Qg(Typ): 21.0nC,Rth(JC): 0.61K/W,Power Dissipation@TC 25C: 250W,Id@TC 25C: -27A