IRGC49B120UB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 3.39V
IRG4BC40K
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 25A
- Vce(ON)@25℃(typ): 2.10V
IRGB4062D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 24A
- Vce(ON)@25℃(typ): 1.60V
IRG4IBC30UD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 8.9A
- Vce(ON)@25℃(typ): 1.95V
NGB8245NT4G

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 500 V |
Maximum Continuous Collector Current: | 20 A |
Maximum Gate Emitter Voltage: | ±15 V |
Mounting: | Surface Mount |
Rad Hard: | No |
IRGC26B120KB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 2.35V
IKB20N60TATMA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 40 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Rad Hard: | No |
IHW30N110R3FKSA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1100 V |
Maximum Continuous Collector Current: | 60 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
FGA20S125P

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1250 V |
Maximum Continuous Collector Current: | 40 A |
Maximum Gate Emitter Voltage: | ±25 V |
Mounting: | Through Hole |
Rad Hard: | No |
STGF14NC60KD

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 11 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRG4PH40UPBF

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 41 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRGP4650DPBF

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 76 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
STGP10H60DF

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600(Min) V |
Maximum Continuous Collector Current: | 20 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 150 ℃ |
Rad Hard: | No |
TIG074E8-TL-H
电气特性 Features
Configuration: | Single Quad Collector Triple Emitter |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 400 V |
Maximum Continuous Collector Current: | 100 A |
Maximum Gate Emitter Voltage: | ±4 V |
Mounting: | Surface Mount |
Operating Temperature: | -40 to 150 ℃ |
Rad Hard: | No |
IRG4BC30F
电气特性 Features
- 高速(1-8kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 17A
- Vce(ON)@25℃(typ): 1.59V