更新于 2025-03-06电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 12V
相关文章
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 16V,RDS(on) Max@10V: 105mΩ,Id: 9.5A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 190.0mΩ,Id: 8.7A
- N沟道功率MOS管,Vbrdss: 150V,Vgs: 20V,RDS(on) Max@10V: 11.0mΩ,Id: 104A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 4.5mΩ,Id: 180A
电气特性 Features
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 4.5 V |
| Maximum Continuous Drain Current: | 145 mA |
| Maximum Gate Source Voltage: | -4 V |
| Maximum Drain Gate Voltage: | -4 V |
| Operating Temperature: | -65 to 160 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |