IKA10N60T

IKA10N60T

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:11.7 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGF6NC60HD

STGF6NC60HD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:6 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4CH30KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 3.1V

IRG4PSC71U

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.67V

IGP50N60TXKSA1

IGP50N60TXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4PC50FPBF

IRG4PC50FPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IHW15T120FKSA1

IHW15T120FKSA1

电气特性 Features

  • 绝缘栅双极型晶体管单管
  • Trans IGBT Chip N-CH 1.2KV 30A

IRG4PC40UDPBF

IRG4PC40UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGB20N60SFD

FGB20N60SFD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRGC50B60PD

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 2V

HGTP10N120BN

HGTP10N120BN

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:35 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGW45HF60WD

STGW45HF60WD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

SKW30N60

SKW30N60

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:41 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4PC50F-E

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 39A
  • Vce(ON)@25℃(typ): 1.45V

IRG4PH30K

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 10A
  • Vce(ON)@25℃(typ): 3.10V