首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 GT50J325(Q) GT50J325(Q) 更新于 2025-03-07 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:50 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleRad Hard:No