首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 FGA50S110P FGA50S110P 更新于 2025-07-08 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1100 VMaximum Continuous Collector Current:50 AMaximum Gate Emitter Voltage:±25 VMounting:Through HoleOperating Temperature:-55 to 175 ℃Rad Hard:No