IGP03N120H2XKSA1

IGP03N120H2XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:9.6 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IGP50N60TXKSA1

IGP50N60TXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4RC10UTRPBF

IRG4RC10UTRPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8.5 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

STGW20IH125DF

STGW20IH125DF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1250 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

STGWT40H65DFB

STGWT40H65DFB

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGB4B60K

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 6.8A
  • Vce(ON)@25℃(typ): 2.10V

IRG4PH50KDPBF

IRG4PH50KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:45 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

FGA25N120ANTDTU

FGA25N120ANTDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGA20S140P

FGA20S140P

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1400 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IRGP4063DPBF

IRGP4063DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:96 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGB4615D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 15A
  • Vce(ON)@25℃(typ): 1.55V

IRG4CC50FB

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.45V

GT60M303(Q)

GT60M303(Q)

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:900 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IRGB4064D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 10A
  • Vce(ON)@25℃(typ): 1.60V

NGTB40N65FL2WG

NGTB40N65FL2WG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No