IRGC4069F
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.6V
IRG4CC80SB
电气特性 Features
- DC-1kHz(标准)IGBT模块
- Vces: 600V
SGF23N60UFTU

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 23 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IGW25T120FKSA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 50 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
STGP19NC60HD

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 40 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
NGTG12N60TF1G

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 24 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 150 ℃ |
Rad Hard: | No |
FGH60T65SHD_F155

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 650 V |
Maximum Continuous Collector Current: | 120 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IRG4BC20FD
电气特性 Features
- 高速(1-8kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 9A
- Vce(ON)@25℃(typ): 1.66V
IRG7PH37K10D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 25A
- Vce(ON)@25℃(typ): 1.90V
HGTP20N60A4

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 70 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
SKP04N60

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 9.4 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
IRG7CH35UEF
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 1.90V
FGH30T65UPDT_F155

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 650 V |
Maximum Continuous Collector Current: | 60 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IRGP4078D
电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 600V
- Ic@100℃: 50A
- Vce(ON)@25℃(typ): 1.90V
IRGB30B60K
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 50A
- Vce(ON)@25℃(typ): 1.95V