更新于 2025-03-07电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 200.0mΩ
- Qg(Typ): 5.8nC
- Rth(JC): 75 (JA)K/W
相关文章
- P沟道功率MOS管,Vbrdss: -40V,Vgs: 20V,RDS(on) Max@10V: 41.0mΩ,RDS(on) Max@4.5V: 70.0mΩ,Qg(Typ): 53.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 600.0mΩ,RDS(on) Max@4.5V: 1000.0mΩ,Qg(Typ): 3.4nC,Rth(JC): 230 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 60.0mΩ,Qg(Typ): 42.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 110W,Id@TC 25C: -31A
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |