N沟道场效应管

IRF6613

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 40V
  • Vgs: 20V
  • RDS(on) Max@10V: 3.4mΩ
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

IRF7769L2

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 3.5mΩ
  • Id: 124A
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

IRFR48Z

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 20V
  • RDS(on) Max@10V: 11.0mΩ
  • Id: 62A
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

IRL520N

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 16V
  • RDS(on) Max@10V: 180.0mΩ
  • Id: 10A
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

IRFH7440

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 40V
  • Vgs: 20V
  • RDS(on) Max@10V: 2.4mΩ
  • Id: 159A
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

CLF1G0060S-10U

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:150(Min) V
Maximum Gate Source Voltage:3 V
Operating Temperature:-65 to 250 ℃
Mounting:Surface Mount
Rad Hard:No
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

MMBFJ112

MMBFJ112

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Gate Source Voltage:-35 V
Maximum Drain Gate Voltage:35 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

IRFSL4020

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 200V
  • Vgs: 20V
  • RDS(on) Max@10V: 105.0mΩ
  • Id: 18A
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

2SK715U

2SK715U

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:15 V
Maximum Continuous Drain Current:50 mA
Maximum Drain Gate Voltage:-15 V
Operating Temperature:-55 to 125 ℃
Mounting:Through Hole
Rad Hard:No
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

MMBF5459

MMBF5459

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Gate Source Voltage:-25 V
Maximum Drain Gate Voltage:25 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

2SK2394-6-TB-E

2SK2394-6-TB-E

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:15 V
Maximum Continuous Drain Current:50 mA
Maximum Drain Gate Voltage:-15 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

IRLR3705Z

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 16V
  • RDS(on) Max@10V: 8.0mΩ
  • Id: 89A
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

CLF1G0060S-30U

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:150(Min) V
Maximum Gate Source Voltage:3 V
Operating Temperature:-55 to 250 ℃
Mounting:Surface Mount
Rad Hard:No
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

IRFB4227

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 200V
  • Vgs: 30V
  • RDS(on) Max@10V: 26.0mΩ
  • Id: 65A
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管

J113

J113

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Gate Source Voltage:-35 V
Maximum Drain Gate Voltage:35 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No
N沟道场效应管 更新于 2025-09-21 Tag标签:N沟道场效应管