
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 170.0mΩ
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5 V |
| Maximum Continuous Drain Current: | 100 mA |
| Maximum Gate Source Voltage: | 1 V |
| Maximum Drain Gate Voltage: | -5 to 1 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 40 V |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | 40 V |
| Operating Temperature: | -65 to 200 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |