J310G

J310G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:25 V
Maximum Gate Source Voltage:25 V
Operating Temperature:-65 to 125 ℃
Mounting:Through Hole
Rad Hard:No

IRF7807PBF-1

IRF7807PBF-1

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 12V

IRL3803

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 16V
  • RDS(on) Max@10V: 6.0mΩ
  • Id: 120A

IRLU3802

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 12V
  • Vgs: 12V
  • Id: 60A

IRF520N

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 200.0mΩ
  • Id: 9.7A

IRL8113

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 6.0mΩ
  • Id: 105A

IRF530NS

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 90.0mΩ
  • Id: 17A

IRF1405

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 20V
  • RDS(on) Max@10V: 5.3mΩ
  • Id: 133A

IRLR8729

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 8.9mΩ
  • Id: 58A

J112_D26Z

J112_D26Z

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Gate Source Voltage:-35 V
Maximum Drain Gate Voltage:35 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No

CPH3910-TL-E

CPH3910-TL-E

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:25 V
Maximum Continuous Drain Current:50 mA
Maximum Drain Gate Voltage:-25 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

2SK3666-3-TB-E

2SK3666-3-TB-E

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:30 V
Maximum Continuous Drain Current:10 mA
Maximum Gate Source Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

IRFH3707

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 12.4mΩ
  • Id: 29A

IRFS4115

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 150V
  • Vgs: 20V
  • RDS(on) Max@10V: 12.1mΩ
  • Id: 99A

IRFR120Z

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 190.0mΩ
  • Id: 8.7A