5HN01C-TB-E

5HN01C-TB-E

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:50 V
Maximum Continuous Drain Current:100 mA
Maximum Gate Source Voltage:±20 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

IRFS3107

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 75V
  • Vgs: 20V
  • RDS(on) Max@10V: 3.0mΩ
  • Id: 230A

IRFHM830

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 3.8mΩ
  • Id: 40A

2SK389BL

电气特性 Features

Configuration:Dual
Channel Type:N
Maximum Drain Gate Voltage:-50 V
Operating Temperature:-55 to 125 ℃
Mounting:Through Hole
Rad Hard:No

IRL520N

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 16V
  • RDS(on) Max@10V: 180.0mΩ
  • Id: 10A

J112_D26Z

J112_D26Z

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Gate Source Voltage:-35 V
Maximum Drain Gate Voltage:35 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No

IRFPS3815

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 150V
  • Vgs: 30V
  • RDS(on) Max@10V: 15.0mΩ
  • Id: 105A

IRFSL3306

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 60V
  • Vgs: 20V
  • RDS(on) Max@10V: 4.2mΩ
  • Id: 160A

IRFB38N20D

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 200V
  • Vgs: 30V
  • RDS(on) Max@10V: 54.0mΩ
  • Id: 44A

TF202THC-5-TL-H

电气特性 Features

  • 场效应晶体管
  • Trans JFET N-CH 1mA

IRF8707

IRF8707

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 11.9mΩ

IRFL024N

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 20V
  • RDS(on) Max@10V: 75.0mΩ
  • Id: 4.0A

IRFHS8242

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 25V
  • Vgs: 20V
  • RDS(on) Max@10V: 13.0mΩ
  • Id: 21A

IRF7805ZPBF-1

IRF7805ZPBF-1

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 6.8mΩ

IRLR2908

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 80V
  • Vgs: 16V
  • RDS(on) Max@10V: 28.0mΩ
  • Id: 39A