5HN01C-TB-E

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Drain Source Voltage: | 50 V |
Maximum Continuous Drain Current: | 100 mA |
Maximum Gate Source Voltage: | ±20 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
IRFS3107
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 75V
- Vgs: 20V
- RDS(on) Max@10V: 3.0mΩ
- Id: 230A
IRFHM830
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 3.8mΩ
- Id: 40A
2SK389BL
电气特性 Features
Configuration: | Dual |
Channel Type: | N |
Maximum Drain Gate Voltage: | -50 V |
Operating Temperature: | -55 to 125 ℃ |
Mounting: | Through Hole |
Rad Hard: | No |
IRL520N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 16V
- RDS(on) Max@10V: 180.0mΩ
- Id: 10A
J112_D26Z

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Gate Source Voltage: | -35 V |
Maximum Drain Gate Voltage: | 35 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Through Hole |
Rad Hard: | No |
IRFPS3815
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 150V
- Vgs: 30V
- RDS(on) Max@10V: 15.0mΩ
- Id: 105A
IRFSL3306
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 4.2mΩ
- Id: 160A
IRFB38N20D
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 54.0mΩ
- Id: 44A
TF202THC-5-TL-H
电气特性 Features
- 场效应晶体管
- Trans JFET N-CH 1mA
IRFL024N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 75.0mΩ
- Id: 4.0A
IRFHS8242
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 13.0mΩ
- Id: 21A
IRLR2908
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 80V
- Vgs: 16V
- RDS(on) Max@10V: 28.0mΩ
- Id: 39A