更新于 2025-07-07电气特性 Features
- 集成肖特基二极管的N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 16V
- RDS(on) Max@10V: 1.6mΩ
- Id: 168A
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- N沟道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 3.0mΩ,Id: 200A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 2.4mΩ,Id: 260A
- N沟道功率MOS管,Vbrdss: 12V,Vgs: 12V,Id: 60A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 250.0mΩ
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -55 to 175 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |