更新于 2025-03-06电气特性 Features
- 集成肖特基二极管的N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 1.35mΩ
- Id: 100A
相关文章
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 12V
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 2.1mΩ,Id: 169A
- N沟道功率MOS管,Vbrdss: 40V,Vgs: 20V,RDS(on) Max@10V: 1.75mΩ,Id: 340A
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 20 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Drain Gate Voltage: | 20 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |