更新于 2025-03-07电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 65.0mΩ
- Qg(Typ): 8.0nC
- Rth(JC): 100 (JA)K/W
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- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 26.0mΩ,RDS(on) Max@4.5V: 40.0mΩ,Qg(Typ): 46.0nC,Rth(JC): 70 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 13.5m?,RDS(on) Max@4.5V: 22.0mΩ,Qg(Typ): 75.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480.0mΩ,Qg(Typ): 18.0nC,Rth(JC): 3.1K/W,Power Dissipation@TC 25C: 48W,Id@TC 25C: -6.8A
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 70 mA |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 35 mA |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |