IRG4PC30FDPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 31 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
更新于 2026-03-11STGB10NC60HDT4
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
SGD02N120
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 6.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
STGB3NC120HDT4
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 14 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG4RC10SD
电气特性 Features
- DC-1kHz(标准)IGBT模块
- Vces: 600V
- Ic@100℃: 8A
- Vce(ON)@25℃(typ): 1.58V
IRGP35B60PD-E
电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 600V
- Ic@100℃: 34A
- Vce(ON)@25℃(typ): 2.25V
IRG4CC40UB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.72V
NGTB75N60FL2WG
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 100 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
IGP30N65F5XKSA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
FGA40N65SMD
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IGB20N60H3ATMA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG4PC40UPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGP6660D
电气特性 Features
- IGBT模块(8-30kHz)
- Vces: 600V
- Ic@100℃: 60A
- Vce(ON)@25℃(typ): 1.65V
IRG4BC30UDPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 23 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGC20B60KB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.82V