IKD04N60RATMA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 8 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Operating Temperature: | -40 to 175 ℃ |
Rad Hard: | No |
IRG4BC30UD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 12A
- Vce(ON)@25℃(typ): 1.95V
IRG4PH50UPBF

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 45 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRGC4275B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 650V
- Ic@100℃: 200A
- Vce(ON)@25℃(typ): 1.60V
FGA25S125P_SN00337

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1250 V |
Maximum Continuous Collector Current: | 50 A |
Maximum Gate Emitter Voltage: | ±25 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
FGB40N60SM

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Rad Hard: | No |
NGTB40N120FL2WG

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IRGC75B60KB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.95V
STGWT40H65FB

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 650 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IRGS14C40LPBF

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 370 V |
Maximum Continuous Collector Current: | 20 A |
Maximum Gate Emitter Voltage: | 10 V |
Mounting: | Surface Mount |
Rad Hard: | No |
IKP03N120H2XKSA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 9.6 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRG4PH50SPBF

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 57 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IGW40N60H3FKSA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IHW40T60FKSA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRGS15B60KD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 15A
- Vce(ON)@25℃(typ): 1.80V