电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 12V
- RDS(on) Max@10V: 6.5mΩ
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电气特性 Features
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 16V,RDS(on) Max@10V: 4.3mΩ,Id: 180A
电气特性 Features
- 场效应晶体管,NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
电气特性 Features
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 16V,RDS(on) Max@10V: 7.0mΩ,Id: 100A
电气特性 Features
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 26.5mΩ,Id: 36A