IRGC100B60KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.9V

IRG4BC30SPBF

IRG4BC30SPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:34 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG7CH81K10EF-R

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 1.15V

HGTG5N120BND

HGTG5N120BND

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:21 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4CC80SB

电气特性 Features

  • DC-1kHz(标准)IGBT模块
  • Vces: 600V

IHW20N120R3FKSA1

IHW20N120R3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

FGA20S120M

FGA20S120M

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IRGS4630DPBF

IRGS4630DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:47 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRG4BC30K

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 16A
  • Vce(ON)@25℃(typ): 2.21V

NGTB20N120IHRWG

NGTB20N120IHRWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRGP4266DPBF

IRGP4266DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:140 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRG6B330UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 330V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 1.36V

STGP10H60DF

STGP10H60DF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600(Min) V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 150 ℃
Rad Hard:No

IRG4PF50WDPBF

IRG4PF50WDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:900 V
Maximum Continuous Collector Current:51 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IKW15T120

IKW15T120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole