更新于 2025-11-07电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 300V
相关文章
- 低导通压降(Vceon)IGBT模块,Vces: 600V,Ic@100℃: 30A,Vce(ON)@25℃(typ): 1.65V
- IGBT模块(8-30kHz),Vces: 1000V,Ic@100℃: 35A,Vce(ON)@25℃(typ): 1.65V
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 31 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 370 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | 10 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 330 V |
| Maximum Continuous Collector Current: | 44 A |
| Maximum Gate Emitter Voltage: | ±12 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |