TIG065E8-TL-H
电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 400 V |
Maximum Gate Emitter Voltage: | ±4 V |
Mounting: | Surface Mount |
Rad Hard: | No |
FGH40T120SMD_F155

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±25 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IRG4CH71KB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 2.97V
IKB03N120H2ATMA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 9.6 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Rad Hard: | No |
IHW30N90T

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 900 V |
Maximum Continuous Collector Current: | 30 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRG4BC20U
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 6.5A
- Vce(ON)@25℃(typ): 1.85V
IRGC4275B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 650V
- Ic@100℃: 200A
- Vce(ON)@25℃(typ): 1.60V
IGP01N120H2XKSA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 3.2 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
SKW30N60HS

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 41 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
IRGC4055B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 300V
NGTB75N60FL2WG

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 100 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IRGR4610D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 10A
- Vce(ON)@25℃(typ): 1.70V
IRGSL15B60KD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 15A
- Vce(ON)@25℃(typ): 1.80V
FGA25S125P_SN00337

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1250 V |
Maximum Continuous Collector Current: | 50 A |
Maximum Gate Emitter Voltage: | ±25 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IGZ100N65H5XKSA1
电气特性 Features
Configuration: | Single Dual Emitter |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 650 V |
Maximum Continuous Collector Current: | 161 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -40 to 175 ℃ |
Rad Hard: | No |