NGTG30N60FWG
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 150 ℃ |
| Rad Hard: | No |
更新于 2025-09-18IRGC4066B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.7V
IRGP4740D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 650V
- Ic@100℃: 40A
- Vce(ON)@25℃(typ): 1.7V
IRGP4078D
电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 600V
- Ic@100℃: 50A
- Vce(ON)@25℃(typ): 1.90V
SKW20N60HS
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 36 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
FGPF50N33BTTU
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 330 V |
| Maximum Continuous Collector Current: | 50 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
STGE200NB60S
电气特性 Features
| Configuration: | Single Dual Emitter |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 200 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Screw |
| Rad Hard: | No |
IRGS4607D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 7.0A
- Vce(ON)@25℃(typ): 1.75V
SGB02N120
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 6.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
FGPF4565
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 170 A |
| Maximum Gate Emitter Voltage: | ±25 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 150 ℃ |
| Rad Hard: | No |
IKB20N60T
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IHW20N65R5XKSA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
SGP02N120
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 6.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IRGSL15B60KD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 15A
- Vce(ON)@25℃(typ): 1.80V
IRG7PG42UD
电气特性 Features
- IGBT模块(8-30kHz)
- Vces: 1000V
- Ic@100℃: 45A
- Vce(ON)@25℃(typ): 1.7V