NGTB40N120IHRWG

NGTB40N120IHRWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IKP06N60T

IKP06N60T

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IHW40N135R3FKSA1

IHW40N135R3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1350 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

TIG074E8-TL-H

电气特性 Features

Configuration:Single Quad Collector Triple Emitter
Channel Type:N
Maximum Collector Emitter Voltage:400 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±4 V
Mounting:Surface Mount
Operating Temperature:-40 to 150 ℃
Rad Hard:No

IRGPS46160DPBF

IRGPS46160DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:240 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGB14C40LPBF

IRGB14C40LPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:370 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:10 V
Mounting:Through Hole
Rad Hard:No

IRG4BH20K-LPBF

IRG4BH20K-LPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:11 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4PH20KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 5A
  • Vce(ON)@25℃(typ): 3.17V

SGL160N60UFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:160 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG7PH42U

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.70V

IRG4BC30W-S

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 2.10V

FGH40N60UFTU

FGH40N60UFTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

NGTG30N60FLWG

NGTG30N60FLWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Operating Temperature:-55 to 150 ℃
Rad Hard:No

FGD3245G2_F085

FGD3245G2_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:480 V
Maximum Continuous Collector Current:23 A
Maximum Gate Emitter Voltage:±10 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRGR4610D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 10A
  • Vce(ON)@25℃(typ): 1.70V