HGT1S12N60A4DS

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 54 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Rad Hard: | No |
IKP10N60TXKSA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 20 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IHW20N120R3

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 40 A |
Maximum Gate Emitter Voltage: | ±25 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRG7PH42UD-EP

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 85 A |
Maximum Gate Emitter Voltage: | ±30 V |
Mounting: | Through Hole |
Rad Hard: | No |
AUIRGF65G40D0

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 62 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IRGP35B60PD-E
电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 600V
- Ic@100℃: 34A
- Vce(ON)@25℃(typ): 2.25V
IKA03N120H2

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 8.2 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
IRGC15B60KD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.8V
IGB20N60H3ATMA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 40 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Rad Hard: | No |
AUIRGP35B60PD-E

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 60 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRG4PH30KD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 10A
- Vce(ON)@25℃(typ): 3.10V
IRGC100B60UB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 2.8V
IRG4PH50S-E
电气特性 Features
- DC-1kHz(标准)IGBT模块
- Vces: 1200V
- Ic@100℃: 33A
- Vce(ON)@25℃(typ): 1.47V