更新于 2026-09-13
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 20V
- RDS(on) Max@10V: 78.0mΩ
IRF7820
相关文章
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 8.7mΩ,Id: 62A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 19.0mΩ
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 16V,RDS(on) Max@10V: 7.0mΩ,Id: 100A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 26.5mΩ,Id: 36A
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 150(Min) V |
| Maximum Gate Source Voltage: | 3 V |
| Operating Temperature: | -65 to 250 ℃ |
| Mounting: | Screw |
| Rad Hard: | No |