IRG7PH44K10D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 1.90V

FGH30T65UPDT_F155

FGH30T65UPDT_F155

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

FGA60N60UFDTU

FGA60N60UFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:120 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4790

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Ic@100℃: 90A
  • Vce(ON)@25℃(typ): 1.7V

IRGS30B60K

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.95V

IKA03N120H2

IKA03N120H2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:8.2 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4PC30W

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 2.10V

IRG7PH50K10D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.90V

IRGP4620D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 20A
  • Vce(ON)@25℃(typ): 1.55V

NGD18N40ACLBT4G

NGD18N40ACLBT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:430 V
Maximum Continuous Collector Current:15 A
Maximum Gate Emitter Voltage:18 V
Mounting:Surface Mount
Rad Hard:No

IKW20N60TFKSA1

IKW20N60TFKSA1

电气特性 Features

  • 绝缘栅双极型晶体管单管
  • Trans IGBT Chip N-CH 600V 40A

NGTB20N120IHRWG

NGTB20N120IHRWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRG4PF50WDPBF

IRG4PF50WDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:900 V
Maximum Continuous Collector Current:51 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IKB15N60TATMA1

IKB15N60TATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG4IBC20WPBF

IRG4IBC20WPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No