IRG4PH50UDPBF

IRG4PH50UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:45 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGB4045D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 6.0A
  • Vce(ON)@25℃(typ): 1.70V

SGB02N120

SGB02N120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:6.2 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount

IRG7PSH50UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 70A
  • Vce(ON)@25℃(typ): 1.70V

IRG4RC10UDPBF

IRG4RC10UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8.5 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG4PH40UDPBF

IRG4PH40UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:41 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

STGD18N40LZT4

STGD18N40LZT4

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:360 V
Maximum Continuous Collector Current:25 A
Maximum Gate Emitter Voltage:12 V
Mounting:Surface Mount
Rad Hard:No

IRGSL15B60KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 15A
  • Vce(ON)@25℃(typ): 1.80V

IGZ75N65H5XKSA1

电气特性 Features

Configuration:Single Dual Emitter
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:119 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGH60T65SHD_F155

FGH60T65SHD_F155

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:120 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGPS46160D

电气特性 Features

  • IGBT模块(8-30kHz)
  • Vces: 600V
  • Ic@100℃: 160A
  • Vce(ON)@25℃(typ): 1.7V

HGTG18N120BND

HGTG18N120BND

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:54 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

SGS10N60RUFDTU

SGS10N60RUFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:16 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGP19NC60WD

STGP19NC60WD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGA50T65SHD

FGA50T65SHD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No