IHW40N60RFKSA1

IHW40N60RFKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4263PBF

IRGP4263PBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:90 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGB4061D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 18A
  • Vce(ON)@25℃(typ): 1.65V

IRG4PC40KPBF

IRG4PC40KPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:42 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

HGTG18N120BND

HGTG18N120BND

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:54 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG8CH29K10F

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 1.70V

IRG4BC40W-SPBF

IRG4BC40W-SPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGZ75N65H5XKSA1

电气特性 Features

Configuration:Single Dual Emitter
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:119 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

HGTG40N60B3

HGTG40N60B3

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4PC40UPBF

IRG4PC40UPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

AUIRGP35B60PD-E

AUIRGP35B60PD-E

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4BC30W

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 2.10V

NGD8201ANT4G

NGD8201ANT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:440 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No

IRGC9B120KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 8A
  • Vce(ON)@25℃(typ): 2.35V

FGH80N60FDTU

FGH80N60FDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No