更新于 2025-03-07电气特性 Features
- IGBT模块(8-30kHz)
- Vces: 600V
- Ic@100℃: 90A
- Vce(ON)@25℃(typ): 1.7V
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Ic@100℃: 25A,Vce(ON)@25℃(typ): 1.90V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 5A,Vce(ON)@25℃(typ): 2.15V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 24 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |