更新于 2025-12-27电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 200.0mΩ
- Qg(Typ): 5.8nC
- Rth(JC): 75 (JA)K/W
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- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: -32.0mΩ,Qg(Typ): 12.0nC,Rth(JC): 62.5 (JA)K/W
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- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 150.0mΩ,Qg(Typ): 21.0nC,Rth(JC): 0.61K/W,Power Dissipation@TC 25C: 250W,Id@TC 25C: -27A
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