更新于 2025-03-07电气特性 Features
- P沟道功率MOS管
- Vbrdss: -12V
- Vgs: 8V
- RDS(on) Max@4.5V: 50.0mΩ
- Qg(Typ): 10.0nC
- Rth(JC): 75 (JA)K/W
相关文章
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 140W,Id@TC 25C: -23A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 70.0mΩ,RDS(on) Max@4.5V: 130.0mΩ,Qg(Typ): 27nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 240.0mΩ,Qg(Typ): 33.0nC,Rth(JC): 20K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 60.0mΩ,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 170W,Id@TC 25C: -40A
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 105.0mΩ,RDS(on) Max@4.5V: 170.0mΩ,Qg(Typ): 31.0nC,Rth(JC): 3.84K/W,Power Dissipation@TC 25C: 33W,Id@TC 25C: -14A