更新于 2026-09-13电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 1.25mΩ
- Id: 400A
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- N沟道功率MOS管,Vbrdss: 55V,Vgs: 16V,RDS(on) Max@10V: 8mΩ,Id: 63A
- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 3.5mΩ,Id: 183A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 4.5mΩ
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 150 V |
| Maximum Gate Source Voltage: | 3 V |
| Operating Temperature: | -65 to 250 ℃ |
| Mounting: | Screw |
| Rad Hard: | No |