电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 1.25mΩ
- Id: 400A
相关文章
电气特性 Features
- 场效应晶体管,NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
电气特性 Features
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 12.0mΩ,Id: 72A
电气特性 Features
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 16V,RDS(on) Max@10V: 8.0mΩ,Id: 86A
电气特性 Features
- N沟道功率MOS管,Vbrdss: 25V,Vgs: 20V,RDS(on) Max@10V: 5.2mΩ,Id: 65A