IRG4BC20U

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 6.5A
  • Vce(ON)@25℃(typ): 1.85V

IKP03N120H2XKSA1

IKP03N120H2XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:9.6 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IHW40N65R5XKSA1

IHW40N65R5XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGD3N60UNDF

FGD3N60UNDF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:6 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-55 to 150 ℃
Rad Hard:No

IRG4PC30FDPBF

IRG4PC30FDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:31 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4PH50KDPBF

IRG4PH50KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:45 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRGP4066

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 90A
  • Vce(ON)@25℃(typ): 1.70V

IHW50N65R5XKSA1

IHW50N65R5XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IKW30N60H3FKSA1

IKW30N60H3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IKW20N60H3FKSA1

IKW20N60H3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGB40N60SM

FGB40N60SM

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG4CC71UB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.67V

STGB10NC60KDT4

STGB10NC60KDT4

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

NGTB15N120IHLWG

NGTB15N120IHLWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG7PH30K10D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 16A
  • Vce(ON)@25℃(typ): 2.05V