IRGP4790D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Ic@100℃: 90A
  • Vce(ON)@25℃(typ): 1.7V

FGH20N60SFDTU

FGH20N60SFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGS10B60KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 1.80V

IHW20N120R5XKSA1

IHW20N120R5XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

AUIRGR4045DTRL

AUIRGR4045DTRL

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG4PC40UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 20A
  • Vce(ON)@25℃(typ): 1.72V

IRGIB15B60KD1

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 1.80V

IGW60T120FKSA1

IGW60T120FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IGW25N120H3FKSA1

IGW25N120H3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

NGB8207ABNT4G

NGB8207ABNT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:365 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No

AUIRG4PH50S

AUIRG4PH50S

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:57 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IKD15N60RFATMA1

IKD15N60RFATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGP50N60T

IGP50N60T

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IHW30N100TFKSA1

IHW30N100TFKSA1

电气特性 Features

  • 绝缘栅双极型晶体管单管
  • Trans IGBT Chip N-CH 1KV 60A

IHW40N60RFKSA1

IHW40N60RFKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No