首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 NGTB30N135IHRWG NGTB30N135IHRWG 更新于 2025-09-17 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1350 VMaximum Continuous Collector Current:60 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleOperating Temperature:-40 to 175 ℃Rad Hard:No