IRG4CC60UB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.7V

IRGP4690DPBF

IRGP4690DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:140 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGC50B120UB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 3.15V

IKW40N120T2

IKW40N120T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:75 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRGC2B60KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 2A
  • Vce(ON)@25℃(typ): 2.00V

IRGP6660D

电气特性 Features

  • IGBT模块(8-30kHz)
  • Vces: 600V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.65V

FGPF4565

FGPF4565

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:170 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Operating Temperature:-55 to 150 ℃
Rad Hard:No

NGTB15N135IHRWG

NGTB15N135IHRWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1350(Min) V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

NGTB40N135IHRWG

NGTB40N135IHRWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1350 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRGC4615B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.55V

IKD06N60RAATMA2

IKD06N60RAATMA2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:500 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGPF10N60UNDF

FGPF10N60UNDF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4BC15UD-L

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 7.8A
  • Vce(ON)@25℃(typ): 2.02V

NGTB35N60FL2WG

NGTB35N60FL2WG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

FGD3040G2_F085

FGD3040G2_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:390 V
Maximum Continuous Collector Current:25.6 A
Maximum Gate Emitter Voltage:±10 V
Mounting:Surface Mount
Rad Hard:No