IKA03N120H2

IKA03N120H2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:8.2 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG7PH30K10

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 23A
  • Vce(ON)@25℃(typ): 2.05V

IRGB4607D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 7.0A
  • Vce(ON)@25℃(typ): 1.75V

NGB8245NT4G

NGB8245NT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:500 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No

IRGS4607DPBF

IRGS4607DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:11 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRG4PSC71UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.67V

FGH75T65UPD_F085

FGH75T65UPD_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:150 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGB4620D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 20A
  • Vce(ON)@25℃(typ): 1.55V

IRGB10B60KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 1.80V

IRGP4069D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.60V

FGA30T65SHD

FGA30T65SHD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

SGB02N120

SGB02N120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:6.2 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount

IRG4BC20UD-S

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 6.5A
  • Vce(ON)@25℃(typ): 1.85V

IRG4RC20FTRLPBF

IRG4RC20FTRLPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:22 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

STGW40V60F

STGW40V60F

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No