SKW20N60HS
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 36 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
更新于 2026-09-15IRG7PSH50UDPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 116 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
AUIRGR4045DTRL
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 12 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRGC75B120KB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 2.1V
STGD7NB60ST4
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 15 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
STGWT40H65FB
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
FGH40T65SHD_F155
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
IGW30N100T
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1000 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IHW20N135R3
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1350 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
STGD3NB60SDT4
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 6 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG4BC15UD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 7.8A
- Vce(ON)@25℃(typ): 2.02V
FGD3440G2_F085
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 390 V |
| Maximum Continuous Collector Current: | 26.9 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
ISL9V5045S3ST
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 445 V |
| Maximum Continuous Collector Current: | 51 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG4PC50F
电气特性 Features
- 高速(1-8kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 39A
- Vce(ON)@25℃(typ): 1.45V
NGTB40N120FL2WG
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |