FGH40N120ANTU

FGH40N120ANTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:64 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IRG4IBC20UDPBF

IRG4IBC20UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:11.4 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGI3040G2_F085

FGI3040G2_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:430 V
Maximum Continuous Collector Current:41 A
Maximum Gate Emitter Voltage:±10 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IGP01N120H2XKSA1

IGP01N120H2XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:3.2 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

ISL9V3040P3

ISL9V3040P3

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:390 V
Maximum Continuous Collector Current:21 A
Maximum Gate Emitter Voltage:±10 V
Mounting:Through Hole
Rad Hard:No

IRGR3B60KD2

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 4.2A
  • Vce(ON)@25℃(typ): 1.90V

NGTB20N120LWG

NGTB20N120LWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGY75N60SMD

FGY75N60SMD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:150 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGF10NC60KD

STGF10NC60KD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:9 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

NGD8205ANT4G

NGD8205ANT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:390 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No

IRGS4045D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 6.0A
  • Vce(ON)@25℃(typ): 1.70V

IHW40T60

IHW40T60

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4640D

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 600V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 1.60V

IKW03N120H2

IKW03N120H2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:9.6 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGH40T100SMD

FGH40T100SMD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1000 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No